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BZX84C11 Datasheet PDF

HOTTECH
Part Number BZX84C11
Manufacturer HOTTECH
Title Plastic-Encapsulate Diodes
Description ZENER DIODES FEATURES Planar Die Construction. 350mW Power Dissipation Zener Voltages From 2.4V - 39V Ideally Suited For Automated Assembly Prcess...
Features Planar Die Construction. 350mW Power Dissipation Zener Voltages From 2.4V - 39V Ideally Suited For Automated Assembly Prcesses Plastic-Encapsulate Diodes BZX84C series SOT-23 Maximum Ratings (TA=25 unless otherwise noted) Characteristic Symbol Forward Voltage (Note 2) @ IF = 10mA VF Power Dis...

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BZX84C11 BZX84C11 BZX84C11




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BZX84C015 : Diody Obj.č 1500296 1500297 1500298 1500299 1500300 1500301 1500302 1500303 1500304 1500305 1500306 1500307 1500308 1500309 1500310 1500311 1500312 1500313 1500314 1500315 1500316 1500317 1500318 1500319 1500320 1500321 1500323 1500325 1500326 1500327 TYP BZX85V007.5 BZX85V008.2 BZX85V009.1 BZX85V010 BZX85V011 BZX85V012 BZX85V013 BZX85V015 BZX85V016 BZX85V018 BZX85V020 BZX85V022 BZX85V024 BZX85V027 BZX85V030 BZX85V033 BZX85V036 BZX85V039 BZX85V043 BZX85V047 BZX85V051 BZX85V056 BZX85V062 BZX85V068 BZX85V075 BZX85V082 BZX85V100 BZX85V150 BZX85V180 BZX85V200 UZ [V] typ. 7,5 8,2 9,1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 100 150 180 200 IZ [mA] 35 25 25 25 20 20 20 .

BZX84C10 : BZX84C3V3 - BZX84C33 — Zeners November 2015 BZX84C3V3 - BZX84C33 Zeners Tolerance: C = 5% 3 1 SOT-23 2 CONNECTION DIAGRAM 3 1 2 NC Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit IFRM IZRM PD RθJA Repetitive Peak Forward Current Repetiti.

BZX84C10 : BZX84Cx Series Surface Mount Zener Diodes Vz Range: 2.4 to 75V Power Dissipation: 350mW Features ■ Total Power Dissipation: Max. 350 mW ■ Working Voltage Range: Nom. 2.4V to 75V ■ Planar Die Construction Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Forward Valtage@IF=10mA Symbol VF Value 0.9 Unit V Power Dissipation Thermal Resistance, Junction to Ambient Air Operating and Storage Temperature Range PD RθJA TJ,TSTG 350 357 -65 to +150 mW °C/W °C Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, 3μs pulse width, period = 5ms. 3. f = 1KH Package: SOT-23 Electrical Characteristics (TA=25°C unless otherwise no.

BZX84C10 : BZX84 C2V7 ... BZX84 C47 Surface Mount Silicon Planar Zener Diodes Silizium-Planar-Zener Dioden für die Oberflächenmontage Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage Nominale Z-Spannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Dimensions / Maße in mm 1 = anode 2 = n. c. / frei 3 = cathode 350 mW 2.7...47 V SOT-23 (TO-236) 0.01 g Standard packaging taped and reeled see page 18 Standard Lieferform gegurtet auf Rolle siehe Seite 18 Standard Zener voltage tolerance is graded to the international E 24 (~5%) standard. Other voltage tolerances and higher Zener voltages on request. Die Toleranz der Zener-Spannung ist in der Standard-Ausführung gestuft.

BZX84C10 : www.vishay.com BZX84 Series Vishay Semiconductors Small Signal Zener Diodes 3 1 2 20421 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Models MARKING (example only) FEATURES • Silicon planar Zener diodes Available • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %, indicated by the “C” in the ordering code. Replace “C” with “B” for ± 2 % tolerance. • AEC-Q101 qualified available • ESD capability acc. to AEC-Q101: human body model: 8 kV, machine model: 800 V • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3_A - RoHS-compliant, AEC-Q101 qualified • Material categorization: for definitions of.

BZX84C10 : ® WON-TOP ELECTRONICS Features  Planar Die Construction  350mW Power Dissipation  2.4V – 51V Nominal Zener Voltage  5% Standard Vz Tolerance  Designed for Surface Mount Application  Plastic Material – UL Recognition Flammability Classification 94V-0 B Mechanical Data  Case: SOT-23, Molded Plastic K  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: See Diagram  Weight: 0.008 grams (approx.)  Mounting Position: Any  Marking: Device Code  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 5 BZX84C2V4 – BZX84C51 350mW SURFACE MOUNT ZENER DIODE Pb L A C ED H J G TOP VIEW M SOT-23 Dim Min Max A 0.37 0.51 B 1..

BZX84C10 : Features  Planar Die Construction  350mW Power Dissipation  Zener Voltages from 2.4V - 51V  Ideally Suited for Automated Assembly Processes  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability SOT23 BZX84C2V4 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Mechanical Data  Case: SOT23  Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208  Polarity: See Diagram  Weight: 0.008 grams (Approxim.

BZX84C10 : Features * Zener breakdown voltage range - 2.0 V to 75 V * Package designed for optimal automated board assembly * Small package size for high density applications BZX84C Series Silicon Planar Zener Diodes A D F CB E GH J 1. Anode 3. Cathode SOT-23 INCHES MM DIM MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.087 0.102 2.20 2.60 C 0.047 0.055 1.20 1.40 D 0.035 0.04 0.89 1.02 E 0.070 0.080 1.78 2.04 F --- 0.004 --- 0.10 G 0.035 0.047 0.89 1.20 H 0.003 0.008 0.08 0.19 J 0.015 0.02 0.37 0.51 Mechanical Data * This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. * These devices are designed to provide vol.

BZX84C10 : BZX84CSeries SILICON PLANAR ZENER DIODES This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. 3 12 1. Anode 3. Cathode SOT-23 Plastic Package Features • Zener breakdown voltage range – 2.0 V to 75 V • Package designed for optimal automated board assembly • Small package size for high density applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Thermal Resistance, Junction to Ambient 1) Junction and Storage Temperature Ra.

BZX84C10 : BZX84C2V0... BZX84C75 Silicon Planar Zener Diodes This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. FEATURES • Zener breakdown voltage range - 2.0 V to 75 V • Package designed for optimal automated board assembly • Small package size for high density applications 1. Anode 3. Cathode SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Power Dissipation Thermal Resistance, Junction to Ambient 1) Junction and Storage Temperature Ran.

BZX84C10 : BZX84C2V4 THRU BZX84C62,BZX84B4V3 THRU BZX84B51 Features • Planar Die Construction • Zener Voltages from 2.4V - 62V • Ideally Suited for Automated Assembly Processes • Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) 350 mWatt Zener Diodes 2.4 to 62 Volts Maximum Ratings • Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance : 357°C/W Junction to Ambient Parameter Symbol Rating Conditions Power Dissipation PD 350mW Note 1 Peak Forwar.

BZX84C10 : BZX84C SERIES 500mW Zener Diode .120(3.04) .106(2.70) .103(2.60) .086(2.10) .080(2.04) .070(1.78) .063(1.6) .047(1.2) .024(.60) .015(.45) .006(.13)MIN. .055(1.40) .035(0.89) .020(.50) .013(.30) .005 (0.18) MAX SOT-23 Dimensions in inches and (millimeters) .008(.20) .003(.08) Features ‧Planar Die construction ‧500mW Power Dissipation ‧Zener Voltages from 2.4V - 51V ‧Ultra-Small Surface Mount Package Power dissipation Mechanical Data ‧Case: SOT-23, Molded Plastic ‧Terminals: Solderable per MIL-STD-202E, Method 20 ‧Polarity: See Diagram Below ‧Approx. Weight: 0.008 grams ‧Mounting Position: Any Absolute Maximum Ratings Parameter Symbol Power Dissipation (Note 1) at Tamb=25oC PT.

BZX84C10 : SEMICONDUCTOR TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES Small Package : SOT-23 Normal Voltage Tolerance About 2.5%. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation Junction Temperature Storage Temperature Range PD* 300 Tj 150 Tstg -55 150 Note PD* : Package Mounted on 99.5% alumina 10 8 0.6mm. UNIT mW BZX84C2V~36V ZENER DIODE SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. NC 2. .

BZX84C10 : Working Voltage Tolerance Repetitive Peak Forward Current Repetitive Peak Working Current Power Dissipation upto Ta=25ºC Power Dissipation upto Tc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Ambient * Device mounted on a ceramic alumna ** Device mounted on an FR5 printed circuit board SYMBOL IFRM IZRM *PD **PD Tj Tstg *Rth (j-a) Forward Voltage at VF 0.9V at 10mA and 1.5V at 200mA ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise) Device Working Differential Temperature Differential Voltage ***VZ ( + 5%) Resistance rdiff (Ω) Coefficient SZ (mV/K) Resistance rdiff (Ω) (V) at IZ test=5mA min max at IZ test=5mA at IZ test=5mA max mi.

BZX84C10 : Green compound Green compound PACKAGE OUTLINE DIMENSION DIM. A B C D E F G H Unit (mm) Min 2.70 1.10 Max 3.10 1.50 0.30 0.51 1.78 2.04 2.10 2.64 0.89 1.30 0.55 REF 0.10 REF Unit (inch) Min 0.106 0.043 Max 0.122 0.059 0.012 0.020 0.070 0.080 0.083 0.104 0.035 0.051 0.022 REF 0.004 REF SUGGEST PAD LAYOUT DIM. Z X Y C E Unit (mm) Typ. 2.90 0.80 0.90 2.00 1.35 Unit (inch) Typ. 0.114 0.031 0.035 0.079 0.053 Document Number: DS_S1408014 Version: C14 Small Signal Product BZX84C2V4 thru BZX84C39 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability f.




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