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2N6562

Part Number 2N6562
Manufacturer SSDI
Title NPN Transistor
Description 10 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N6562 2N6581 2N6590 10 450 10 40 ...
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2N656 : 2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSISTORS . NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications. • High Collector·Emitter Breakdown Voltage - BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657 • High Emitter-Base Breakdown Voltage - BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde NPN SILICON ANNULAR TRAN~STORS *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ T A - 2SoC Derate above 2SoC Total Device Dissipation @ Teo:: 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB PD PD TJ,Tstg 2N656 2N657 60 100 60 100 8.0 1.0 5.7.

2N6560 : 2N6560 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 – Base TO3 (TO204AA) PINOUTS 2 – Emitter Case - Collector Bipolar NPN Device. VCEO = 450V IC = 10A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO* IC(CONT) hFE ft PD Test Conditi.

2N6560 : ·Collector-Emitter Breakdown Voltage- : VCEO=450V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 220 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6560 isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless .

2N6561 : 2N6561 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 – Base TO3 (TO204AA) PINOUTS 2 – Emitter Case - Collector Bipolar NPN Device. VCEO = 300V IC = 10A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO* IC(CONT) hFE ft PD Test Conditi.

2N6561 : ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 220 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6561 isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless .

2N6563 : 10 AMP NPN(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N1904 10 100 20 60 Note 1 1 Note 1 Note 1 125 TO-61 2N4070 10 100 40 120 5 0.6 5 20 65* TO-3 2N5048 10 100 15 60 Note 1 2 Note 1 Note 1 100 TO-61 2N5288 10 100 30 90 5 0.9 5 30 116 TO-61/I 2N5289 10 100 70 200 5 0.9 5 40 116 TO-61/I 2N5315 10 100 30 90 10 1.5 10 30 50* TO-61 2N5319 10 100 30 90 5 0.6 5 30 50* TO-61/I 2N5628 10 100 30 90 5 0.9 5 30 116 TO-3 2N5632 10 100 25 100 Note 1 1 Note 1 Note 1 .

2N6566 : .

2N6567 : .

2N6568 : .

2N6569 : A A A .

2N6569 : ·With TO-3 package ·Complement to type 2N6594 ·Wide area of safe operation APPLICATIONS ·Designed for low voltage amplifier power switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB IE IEM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Emitter current Emitter current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 45 40 5 12 24 5 17 34 100 200 -65~200 UNIT V V V A A A A A W Savant.

2N6569 : 2N6569 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 – Base TO3 (TO204AA) PINOUTS 2 – Emitter Case - Collector Bipolar NPN Device. VCEO = 40V IC = 12A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO* IC(CONT) hFE ft PD Test Conditio.




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