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2N5629


Part Number 2N5629
Manufacturer Thomson
Title COMPLEMENTARY HIGH POWER TRANSISTORS
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File Size 147.39KB
Datasheet 2N5629 PDF File








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2N5620 : www.DataSheet4U.com 2N5620 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 100V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CO.

2N5620 : ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5614 VCBO Collector-base voltage 2N5616/5618 2N5620 2N5614 VCEO Collector-emitter voltage 2N5616/5618 2N5620 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 60 80 100 5 5 50 150 -65~150 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j.

2N5621 : ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio and general-purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5621 VCBO Collector-base voltage 2N5623/5625 2N5627 2N5621 VCEO Collector-emitter voltage 2N5623/5625 2N5627 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -80 -100 -120 -60 -80 -100 -5 -10 100 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PAR.

2N5621 : 2N5621 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 – Base TO3 (TO204AA) PINOUTS 2 – Emitter Case - Collector Bipolar PNP Device. VCEO = 60V IC = 10A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO* IC(CONT) hFE ft PD Test Conditio.

2N5622 : 2N5622 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 60V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 10A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test C.

2N5622 : ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio and general-purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5622 VCBO Collector-base voltage 2N5624/5626 2N5628 2N5622 VCEO Collector-emitter voltage 2N5624/5626 2N5628 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 60 80 100 5 10 100 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER T.

2N5623 : www.DataSheet4U.com 2N5623 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 80V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 10A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CO.

2N5623 : ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio and general-purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5621 VCBO Collector-base voltage 2N5623/5625 2N5627 2N5621 VCEO Collector-emitter voltage 2N5623/5625 2N5627 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -80 -100 -120 -60 -80 -100 -5 -10 100 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PAR.

2N5624 : ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio and general-purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5622 VCBO Collector-base voltage 2N5624/5626 2N5628 2N5622 VCEO Collector-emitter voltage 2N5624/5626 2N5628 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 60 80 100 5 10 100 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER T.

2N5625 : ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio and general-purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5621 VCBO Collector-base voltage 2N5623/5625 2N5627 2N5621 VCEO Collector-emitter voltage 2N5623/5625 2N5627 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -80 -100 -120 -60 -80 -100 -5 -10 100 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PAR.

2N5626 : ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio and general-purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5622 VCBO Collector-base voltage 2N5624/5626 2N5628 2N5622 VCEO Collector-emitter voltage 2N5624/5626 2N5628 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 60 80 100 5 10 100 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER T.

2N5627 : www.DataSheet4U.com 2N5627 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 100V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 10A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(C.

2N5627 : ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio and general-purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5621 VCBO Collector-base voltage 2N5623/5625 2N5627 2N5621 VCEO Collector-emitter voltage 2N5623/5625 2N5627 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -80 -100 -120 -60 -80 -100 -5 -10 100 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PAR.

2N5628 : ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio and general-purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5622 VCBO Collector-base voltage 2N5624/5626 2N5628 2N5622 VCEO Collector-emitter voltage 2N5624/5626 2N5628 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 60 80 100 5 10 100 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER T.

2N5629 : The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N5629 2N6029 100 2N5630 2N6030 120 100 120 7.0 16 20 5.0 200 -65 to +200 0.875 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise note.

2N5629 : ·With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER Collector-base voltage 2N5629 2N5630 Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 2N5629 2N5630 Open collector Open base CONDITIONS Open emitter VALUE 100 120 100 120 7 16 20 5.0 200 200 -65~200 V A A A W V UNIT V VCEO VEBO IC ICM IB PD Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Therm.




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