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2N5329

Part Number 2N5329
Manufacturer CRYSTALONCS
Title NPN Power Transistor
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2N5320 : The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary PNP types are respectively the 2N5322 and 2N5323 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CEO V EBO IC I CM IB P tot P tot T stg , T j Parameter 2N5320 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = 1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T amb = 25 C Total Dissipation at T c = 25 o C Storage and Junction .

2N5320 : .

2N5320 : .

2N5320 : .

2N5320 : Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current-Continuous Base Current Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Junction to Ambient in Free Air Junction to Case Symbol VCEO VCBO VEBO IC IB PD.

2N5320 : The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series devices are complementary silicon power transistors manufactured by the epitaxial planar process, designed for amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEV VCEO VEBO IC IB PD TJ, Tstg ΘJA ΘJC 2N5320 2N5322 100 2N5321 2N5323 75 100 75 75 50 6.0 5.0 2.0 1.0 10 -65 to +200 175 17.5 ELECTRICAL CHARACTERISTICS: (TC.

2N5320 : SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5320 • Low VCE(sat), hFE 30-130 (@VCE=4V, IC=0.5A) • Hermetic TO-39 Metal package. • Ideally Suited For Medium Power Amplifier And Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 75V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 2A IB Base Current 1.0A PD Total Power Dissipation at TA = 25°C 1.0W Derate Above 25°C 5.71mW/°C PD Total Power Dissipation at TC = 25°C 7W Derate Above 25°C 40mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +20.

2N5320 : NPN 2N5320 – 2N5321 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5320 and 2N5321 are NPN transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCEV VEBO IC IB Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (VBE = 1.5V) Emitter-Base Voltage (IC = 0) Collector Current Base Current @ Tamb = 25° www.DataSheet.net/ Value 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 75 50 100 75 100 75 6 5.

2N5320 : Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Base Current Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD PD Tj, Tstg 2N5320 75 100 7 2N5321 2N5322 50 75 75 100 57 2.0 1.0 1 5.71 10 57.14 - 65 to +200 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 175 17.5 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=100mA, IB=0 2N5320/5322 2N5321/5323 Collector Cut Off Curren.

2N5320 : 2N5320 2N5321 CASE 79, STYLE 1 TO-39 (TO-205AD) SWITCHING TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol vCEO vCBO v EBO IB ic PD TJ- Tstg -, . 2N5320 2N5321 75 50 100 75 7.0 5.0 1.0 2.0 10 0.057 -65 to + 200 Unit Vdc Vdc Vdc Adc Adc Watts mW/°C °C Symbol R 6UC Max 17.5 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Co I lector-.

2N5320 : 2N5320 Silicon NPN Transistor High Current, General Purpose TO−39 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Base Current,.

2N5321 : The 2N5320 and 2N5321 are silicon epitaxial planar NPN transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary PNP types are respectively the 2N5322 and 2N5323 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CEO V EBO IC I CM IB P tot P tot T stg , T j Parameter 2N5320 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = 1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T amb = 25 C Total Dissipation at T c = 25 o C Storage and Junction .

2N5321 : .

2N5321 : .

2N5321 : .

2N5321 : The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series devices are complementary silicon power transistors manufactured by the epitaxial planar process, designed for amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEV VCEO VEBO IC IB PD TJ, Tstg ΘJA ΘJC 2N5320 2N5322 100 2N5321 2N5323 75 100 75 75 50 6.0 5.0 2.0 1.0 10 -65 to +200 175 17.5 ELECTRICAL CHARACTERISTICS: (TC.

2N5321 : NPN 2N5320 – 2N5321 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5320 and 2N5321 are NPN transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCEV VEBO IC IB Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (VBE = 1.5V) Emitter-Base Voltage (IC = 0) Collector Current Base Current @ Tamb = 25° www.DataSheet.net/ Value 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 2N5320 2N5321 75 50 100 75 100 75 6 5.




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