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2N6519

ON Semiconductor
Part Number 2N6519
Manufacturer ON Semiconductor
Description High Voltage Transistors
Published Jul 14, 2017
Detailed Description High Voltage Transistors MAXIMUM RATINGS Rating 2N6517 Symbol 2N6515 2N6519 2N6520 Unit Collector–Emitter Voltage C...
Datasheet PDF File 2N6519 PDF File

2N6519
2N6519

Overview
High Voltage Transistors MAXIMUM RATINGS Rating 2N6517 Symbol 2N6515 2N6519 2N6520 Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 VCEO 250 300 350 Vdc VCBO 250 300 350 Vdc VEBO Vdc 6.
0 5.
0 Base Current Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C IB IC PD 250 mAdc 500 mAdc 625 mW 5.
0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.
5 Watts 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case COLLECTOR 3 RqJA RqJC 200 °C/W 83.
3 °C/W COLLECTOR 3 NPN 2N6515 2N6517 PNP 2N6519 2N6520 Voltage and current are negative for PNP transistors 1 23 CASE 29–04, STYLE 1 TO–92 (TO–226AA) 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER ELECTRICAL CHARACTERISTICS (TA =...


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