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2SA1981S Datasheet PDF

LZG
Part Number 2SA1981S
Manufacturer LZG
Title SILICON PNP TRANSISTOR
Description 2SA1981S(3CG1981M) PNP /SILICON PNP TRANSISTOR :。 Purpose: Audio power amplifier application. :, 2SC5344S(3DG5344M)。 Features: High hFE, comple...
Features High hFE, complementary pair with 2SC5344S(3DG5344M). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -35 V VCEO -30 V VEBO -5.0 V IC -800 mA PC 200 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO h...

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2SA1981S 2SA1981S 2SA1981S




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2SA1907 : ·With TO-3PML package ·Complement to type 2SC5099 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -6 -6 -3 60 150 -55~150 UNIT V V V A A W 1 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specifie.

2SA1907 : ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5099 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: www.iscsemi.com 1 isc & iscsemi is regist.

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2SA1908 : ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5100 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: www.iscsemi.com 1 isc & iscsemi is re.

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2SA1909 : ·With TO-3PML package ·Complement to type 2SC5101 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -6 -10 -4 80 150 -55~150 UNIT V V V A A W 1 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise speci.

2SA1909 : ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5101 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: www.iscsemi.com 1 isc & iscsemi is r.

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2SA1923 : TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications 2SA1923 Unit: mm • High voltage: VCEO = −400 V • Low saturation voltage: VCE (sat) = −1 V (max) (IC = −100 mA, IB = −10 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −400 −400 −7 −0.5 −1 −0.25 1 10 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) 1 2005-02-01 2SA1923 Electrical.

2SA1924 : TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications 2SA1924 Unit: mm • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE (sat) = −1 V (max) (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −400 −400 −7 −0.5 −1 −0.25 1.5 10 150 −55 to 150 Electrical Characteristics (Tc = 25°C) Unit V .




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