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PBSS4160T

Part Number	PBSS4160T
Manufacturer	GME
Description	NPN Low VCEsat Transistor
Published	Jul 30, 2017
Detailed Description	Production specification NPN Low VCEsat Transistor FEATURES z Low collector-emitter saturation voltage VCEsat Pb z H...
Datasheet	PBSS4160T PDF File

Overview

Production specification NPN Low VCEsat Transistor FEATURES z Low collector-emitter saturation voltage VCEsat Pb z High collector current capability IC and ICM Lead-free z High efficiency, reduces heat generation z Reduces printed-circuit board area required PBSS4160T APPLICATIONS z Major application segments z Power management z Peripheral driver ORDERING INFORMATION Type No.
Marking PBSS4160T U5 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous ICM peak collector current (t = 1 ms or limited by Tj(max)) IB...

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