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2SC3357

GME
Part Number 2SC3357
Manufacturer GME
Description NPN Silicon Transistor
Published Aug 6, 2017
Detailed Description Production specification NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD 2SC3357 FEATURES Pb z Low Noise and High ...
Datasheet PDF File 2SC3357 PDF File

2SC3357
2SC3357

Overview
Production specification NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD 2SC3357 FEATURES Pb z Low Noise and High Gain Lead-free NF = 1.
1 dB TYP.
, Ga = 8.
0 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.
0 GHz NF = 1.
8 dB TYP.
, Ga = 9.
0 dB TYP.
@VCE = 10 V, z Large PT in Small Package PT : 2 W with 16 cm2*0.
7 mm Ceramic Substrate.
APPLICATIONS z The 2SC3357 is an NPN silicon epitaxial transistor designed For low noise amplifier at VHF, UHF and CATV band.
z It has large dynamic range and good current characteristic.
ORDERING INFORMATION Type No.
Marking 2SC3357 RH/RF/RE Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO Collector-Base V...


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