DatasheetsPDF.com

2SA1160

Part Number	2SA1160
Manufacturer	JCET
Description	PNP Transistor
Published	Aug 17, 2017
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA1160 TRANSISTOR (PNP) FEAT...
Datasheet	2SA1160 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-92L Plastic-Encapsulate Transistors 2SA1160 TRANSISTOR (PNP) FEATURES z High DC Current Gain and Excellent hFE Linearity z Low Saturation Voltage TO – 92L 1.
EMITTER 2.
COLLECTOR 3.
BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -20 -10 -6 -2 900 139 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-ba...

Similar Datasheet

2SA1102 SILICON POWER TRANSISTOR - SavantIC
2SA1102 POWER TRANSISTOR - Inchange Semiconductor
2SA1103 SILICON POWER TRANSISTOR - SavantIC
2SA1103 POWER TRANSISTOR - Inchange Semiconductor
2SA1104 SILICON POWER TRANSISTOR - SavantIC
2SA1104 POWER TRANSISTOR - Inchange Semiconductor
2SA1105 SILICON POWER TRANSISTOR - SavantIC
2SA1105 POWER TRANSISTOR - Inchange Semiconductor
2SA1106 SILICON POWER TRANSISTOR - SavantIC
2SA1106 POWER TRANSISTOR - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)