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2SC3358

Part Number	2SC3358
Manufacturer	GME
Description	Silicon Epitaxial Planar Transistor
Published	Aug 21, 2017
Detailed Description	Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain. NF=1.1dB TYP.,Ga=11dB...
Datasheet	2SC3358 PDF File

Overview

Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain.
NF=1.
1dB TYP.
,Ga=11dB TYP.
@VCE=10V,IC=7mA, f=1.
0GHz z High power gain.
MAG=13dB TYP.
@VCE=10V,IC=20mA,f=1.
0GHz.
Pb Lead-free 2SC3358 APPLICATIONS z Designed for low noise amplifier at VHF,UHF and CATV band.
SOT-363 ORDERING INFORMATION Type No.
Marking 2SC3358 R23/R24/R25 Package Code SOT-363 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 20 VCEO Collector-Emitter Voltage 12 VEBO Emitter-Base Voltage 3 IC Collector Current -Continuous 100 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -6...

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