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2SA1129

Part Number	2SA1129
Manufacturer	NEC
Description	PNP Transistor
Published	Aug 21, 2017
Detailed Description	DATA SHEET SILICON POWER TRANSISTOR 2SA1129 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-...
Datasheet	2SA1129 PDF File

Overview

DATA SHEET SILICON POWER TRANSISTOR 2SA1129 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1129 is a mold power transistor developed for mid-speed switching, and is ideal for use as a ramp driver.
FEATURES • Large current capacity with small package: IC(DC) = −7.
0 A • Low collector saturation voltage: VCE(sat) = −0.
3 V MAX.
@IC = −3.
0 A, IB = −0.
1 A • Complementary transistor: 2SC2654 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperatur...

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