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VEC2616

ON Semiconductor
Part Number VEC2616
Manufacturer ON Semiconductor
Description Power MOSFET
Published Aug 30, 2017
Detailed Description VEC2616 Power MOSFET 60V, 80mΩ, 3A, –60V, 137mΩ, –2.5A, Complementary This Power MOSFET is produced using ON Semiconduc...
Datasheet PDF File VEC2616 PDF File

VEC2616
VEC2616

Overview
VEC2616 Power MOSFET 60V, 80mΩ, 3A, –60V, 137mΩ, –2.
5A, Complementary This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance.
This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features • Low On-Resistance • 4V drive • Low-Profile Package • Complementary N-Channel and P-Channel MOSFET • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance Typical Applications • Motor Driver SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol N-Channel P-Channel Unit Drain to Source Voltage VDSS 60 −60 V Gate to Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID 3 −2.
5 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 12 −10 A Power Dissipation When mounted on ceramic substrate (900mm2 × 0.
8mm) 1unit Total Dissipation When mounted on ceramic substrate (...


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