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2SD1913

Part Number	2SD1913
Manufacturer	GME
Description	Power Transistor
Published	Aug 31, 2017
Detailed Description	Power Transistor(60V,3A ) FEATURES z Wide ASO (Adoption of MBIT process). z Low saturation voltage. z High reliability....
Datasheet	2SD1913 PDF File

Overview

Power Transistor(60V,3A ) FEATURES z Wide ASO (Adoption of MBIT process).
z Low saturation voltage.
z High reliability.
z High breakdown voltage.
z Micaless package facilitating mounting Pb Lead-free Production specification 2SD1913 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature 60 V 6V 3A 2W -55 to +150 ℃ X097 Rev.
A www.
gmicroelec.
com 1 Production specification Power Transistor(60V,3A ) 2SD1913 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter Symbol Test conditions MIN Typ MAX UNIT Collector-base Breakdown Voltage BVCBO IC=1mA,IB=0 60 V Collector-emitter Breakdown Voltage BVCEO IC=5mA,IB=0 60 V Emitter-base Breakdown Voltage BVEBO IE=1mA,IC=0 6 V Collect...

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