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1N4448

Taiwan Semiconductor
Part Number 1N4448
Manufacturer Taiwan Semiconductor
Description High Speed Switching Diode
Published Sep 3, 2017
Detailed Description 1N4148 / 1N4448 / 1N914B Taiwan Semiconductor 500mW, High Speed Switching Diode FEATURES ● Low power loss, high effici...
Datasheet PDF File 1N4448 PDF File

1N4448
1N4448

Overview
1N4148 / 1N4448 / 1N914B Taiwan Semiconductor 500mW, High Speed Switching Diode FEATURES ● Low power loss, high efficiency ● Ideal for automated placement ● High surge current capability ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) KEY PARAMETERS PARAMETER VALUE UNIT IF 150 mA VRRM 100 V IFSM 2 A VF at IF=100mA 1 V TJ MAX Package Configuration 150 °C DO-35 Singal die MECHANICAL DATA ● Case: DO-35 ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Polarity: Indicated by cathode band ● Weight: 125 ± 4 mg ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL 1N4148 1N4448 1N914B Power dissipation PD 500 Repetitive peak reverse voltage VRRM 100 Non-Repetitive peak forward surge current Pluse width = 1μs, Square wave IFSM 2 Non-Repetitive peak forward current IFM 450 Forward current IF 150 Junction temperature range TJ -65 to +150 Storage temperature range TSTG -65 to +150 UNIT mW V A mA mA °C °C THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance SYMBOL RӨJA TYP 240 UNIT °C/W 1 Version:J1804 1N4148 / 1N4448 / 1N914B Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN 1N4448,1N914B Forward voltage per diode (1) 1N4148 1N4448,1N914B IF = 5 mA, TJ = 25°C IF = 10 mA, TJ = 25°C IF = 100 mA, TJ = 25°C 0.
62 VF - - Reverse voltage IR = 100 μA, TJ = 25°C (2) IR = 5 μA, TJ = 25°C 100 VR 75 Reverse current (2) VR = 20 V, TJ = 25°C VR = 75 V, TJ = 25°C Junction capacitance 1 MHz, VR=0V Reverse recovery time Notes: IF= 10mA , VR=6V, RL= 100Ω , IRR= 1mA 1.
Pulse test with PW=0.
3 ms 2.
Pulse test with PW=30 ms - IR - CJ - trr - MAX 0.
72 1.
00 1.
00 25 5 4 4 UNIT V V nA μA pF ns ORDERING INFORMATION ...


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