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BZV90-47

Part Number	BZV90-47
Manufacturer	NXP
Description	Voltage regulator diodes
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BZV90 series Voltage regulator diodes Product speciﬁcation S...
Datasheet	BZV90-47 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BZV90 series Voltage regulator diodes Product speciﬁcation Supersedes data of 1996 Oct 25 1999 May 17 Philips Semiconductors Product speciﬁcation Voltage regulator diodes FEATURES • Total power dissipation: max.
1500 mW • Tolerance series: approx.
±5% • Working voltage range: nom.
2.
4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max.
40 W.
APPLICATIONS • General regulation functions.
1 handbook, halfpage BZV90 series PINNING PIN 1 2, 4 3 anode cathode anode DESCRIPTION 4 3 DESCRIPTION Medium-power voltage regulator diodes in SOT223 plastic SMD packages.
1 2 3 MAM242 2, 4 The diodes are available in the normalized E24 approx.
±5% tolerance range.
The series consists of 37 types with nominal working voltages from 2.
4 to 75 V (BZV90-C2V4 to C75).
Top view Fig.
1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL IF IZSM Ptot PZSM Tstg Tj Note 1.
Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2.
ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified.
SYMBOL VF 1999 May 17 PARAMETER forward voltage CONDITIONS IF = 50 mA; see Fig.
3 2 MIN.
− MAX.
1.
0 UNIT V PARAMETER continuous forward current non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.
2 CONDITIONS − see Table “Per type” − − −65 − 1500 40 +150 150 mW W °C °C MIN.
MAX.
400 UNIT mA 1999 May 17 3 Philips Semiconductors Per type Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP.
COEFF.
SZ (mV/K) at IZtest see Figs 4 and 5 TEST DIODE CAP.
CURRENT Cd (pF) IZtest (mA) at f = 1 MHz; at VR =...

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