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BYD72B

NXP
Part Number BYD72B
Manufacturer NXP
Description Ultra fast low-loss controlled avalanche rectifiers
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D423 BYD72 series Ultra fast low-loss controlled avalanche rectif...
Datasheet PDF File BYD72B PDF File

BYD72B
BYD72B

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D423 BYD72 series Ultra fast low-loss controlled avalanche rectifiers Preliminary specification 1998 Dec 03 Philips Semiconductors Preliminary specification Ultra fast low-loss controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack.
MGL571 BYD72 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION Cavity free cylindrical glass SOD120 package through Implotec™(1) technology.
This package is handbook, k halfpage a Fig.
1 Simplified outline (SOD120) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM BYD72A BYD72B BYD72C BYD72D BYD72E BYD72F BYD72G VR continuous reverse voltage BYD72A BYD72B BYD72C BYD72D BYD72E BYD72F BYD72G IF(AV) average forward current BYD72A to D BYD72E to G IFSM Tstg Tj non-repetitive peak forward current storage temperature junction temperature see Fig.
7 Tamb = 25 °C; printed-circuit board mounting, pitch 5 mm, see Fig.
8; averaged over any 20 ms period; see Figs 2 and 3 t = 10 ms half sine wave; Tj = 25 °C; VR = VRRMmax − − − − − − − − − − −65 −65 50 100 150 200 250 300 400 1.
02 0.
95 15 +175 +175 V V V V V V V A A A °C °C PARAMETER repetitive peak reverse voltage − − − − − − − 50 100 150 200 250 300 400 V V V V V V V CONDITIONS MIN.
MAX.
UNIT 1998 Dec 03 2 Philips Semiconductors Preliminary specification Ultra fast low-loss controlled avalanche rectifiers ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL VF PARAMETER forward voltage BYD72A to D BYD72E to G IR trr reverse current reverse recovery time BYD72A to D BYD72E to G VFRM forward recovery voltage BYD72A to D BYD72E to G THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance ...


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