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BUP309

Siemens Semiconductor Group
Part Number BUP309
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BUP 309 IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward...
Datasheet PDF File BUP309 PDF File

BUP309
BUP309

Overview
BUP 309 IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward voltage drop Remark: The TO-218 AB case doesn't solve the standards VDE 0110 and UL 508 for creeping distance Pin 1 G Type BUP 309 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V Pin 2 C Ordering Code Q67078-A4204-A2 Pin 3 E VCE IC Package TO-218 AB 1700V 25A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 25 16 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 50 32 TC = 25 °C TC = 90 °C Avalanche energy, single pulse EAS 23 mJ IC = 15 A, VCC = 50 V, RGE = 25...


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