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BUZ11AL

Siemens Semiconductor Group
Part Number BUZ11AL
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 11 AL Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level ...
Datasheet PDF File BUZ11AL PDF File

BUZ11AL
BUZ11AL

Overview
BUZ 11 AL Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 11 AL Pin 2 D Pin 3 S VDS 50 V ID 26 A RDS(on) 0.
055 Ω Package TO-220 AB Ordering Code C67078-S1330-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 26 Unit A ID IDpuls 104 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 30 1.
9 mJ ID = 30 A, VDD = 25 V, RGS = 25 Ω L = 15.
6 µH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 14 VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C Operati...


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