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BUZ11S2

Part Number	BUZ11S2
Manufacturer	Siemens Semiconductor Group
Description	Power Transistor
Published	Mar 23, 2005
Detailed Description	BUZ 11 S2 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin ...
Datasheet	BUZ11S2 PDF File

Overview

BUZ 11 S2 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 S2 VDS 60 V ID 30 A RDS(on) 0.
04 Ω Package TO-220 AB Ordering Code C67078-S1301-A5 Maximum Ratings Parameter Continuous drain current Symbol Values 30 Unit A ID IDpuls 120 TC = 29 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 30 1.
9 mJ ID = 30 A, VDD = 25 V, RGS = 25 Ω L = 15.
6 µH, Tj = 25 °C Gate source voltage Power dissipation 14 VGS Ptot ± 20 75 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance,...

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