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1N485B

Microsemi Corporation
Part Number 1N485B
Manufacturer Microsemi Corporation
Description GENERAL PURPOSE SILICON DIODES
Published Mar 23, 2005
Detailed Description • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED M...
Datasheet PDF File 1N485B PDF File

1N485B
1N485B

Overview
• AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.
2 mA/°C From 25°C to 150°C 1.
0 mA/°C From 150°C to 175°C Forward Current: 650 mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE 1N483B 1N485B 1N486B VRM V RWM V (pk) 80 180 250 V (pk) 70 180 225 I O I O I FSM TA = 150°C TP = 1/120 s TA = 25°C mA mA A 200 50 200 50 200 50 2 2 2 TYPE 1N483B 1N485B 1N486B VF @100mA I R1 at V RWM I R2 at V RM I R3 at V RWM TA = 25°C TA = 25°C TA = 150°C V dc 0.
8 - 1.
0 0.
8 - 1.
0 0.
8 - 1.
0 nA dc 25 25 25 µA 100 100 100 µA dc 5 5 5 1N483B 1N485B 1N486B 0.
085/0.
125 2.
16/3.
18 FIGURE 1 DESIGN DATA CASE: Hermetically sealed glass case.
DO-7 outline LEAD MATERIAL: Copper clad steel LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 200 °C/W maximum T...


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