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BS829

General Semiconductor
Part Number BS829
Manufacturer General Semiconductor
Description DMOS Transistors
Published Mar 23, 2005
Detailed Description BS829 DMOS Transistors (P-Channel) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ .045 (1.15) .037 ...
Datasheet PDF File BS829 PDF File

BS829
BS829

Overview
BS829 DMOS Transistors (P-Channel) SOT-23 .
122 (3.
1) .
118 (3.
0) .
016 (0.
4) 3 FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ .
045 (1.
15) .
037 (0.
95) Top View .
056 (1.
43) .
052 (1.
33) 1 2 max.
.
004 (0.
1) High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown .
007 (0.
175) .
005 (0.
125) .
037(0.
95) .
037(0.
95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx.
0.
008 g Marking S29 .
016 (0.
4) .
016 (0.
4) .
102 (2.
6) .
094 (2.
4) Dimensions in inches and (millimeters) Pin configuration 1 = Gate, 2 = Source, 3 = Drain MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) at TSB = 50 °C Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Value 400 400 ±20 70 3501) 150 –65 to +150 Unit V V V mA mW °C °C –VDSS –VDGS VGS – ID Ptot Tj TS Device on fiberglass substrate, see layout Inverse Diode Symbol Max.
Forward Current (continuous) at Tamb = 25 °C Forward Voltage Drop (typ.
) at VGS = 0 V, IF = 350 mA, Tj = 25 °C 4/98 Value 350 1.
0 Unit mA V IF VF BS829 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Breakdown Voltage at –ID = 100 µA, VGS = 0 V Gate-Body Leakage Current, Forward at –VGSF = 20 V, VDS = 0 V Gate-Body Leakage Current, Reverse at –VGSR = 20 V, VDS = 0 V Drain Cutoff Current at –VDS = 400 V, VGS = 0 V Gate-Source Threshold Voltage at VGS = VDS, –ID = 250 µA Drain-Source ON Resistance at VGS = 5 V, –ID = 100 mA Capacitance at –VDS = 25 V, VGS = 0 V, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance Switching Times at –VGS = 10 V, –VDS = 10 V, RD = 100 Ω Turn-On Time Turn-Off Time Thermal Resistance Junction to Ambient Air 1) Min.
400 – – – 1 – Typ.
...


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