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HS1G

Part Number	HS1G
Manufacturer	Taiwan Semiconductor
Description	High Efficient Surface-Mount Rectifier
Published	Dec 13, 2017
Detailed Description	HS1A – HS1M Taiwan Semiconductor 1A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES ● Glass passivated ch...
Datasheet	HS1G PDF File

Overview

HS1A – HS1M Taiwan Semiconductor 1A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES ● Glass passivated chip junction ● Ideal for automated placement ● Fast switching for high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Lighting application ● Snubber ● Freewheeling application KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 1 A 50 - 1000 V IFSM TJ MAX Package 30 A 150 °C DO-214AC (SMA) Configuration Single die MECHANICAL DATA ● Case: DO-214AC (SMA) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.
060g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M UNIT Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Peak forward surge current, 8.
3ms single half sine-wave superimposed on rated load Junction temperature HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M VRRM 50 100 200 300 400 600 800 1000 V VR(RMS) 35 70 140 210 280 420 560 700 V IF 1 A IFSM 30 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: L2102 HS1A – HS1M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance SYMBOL RӨJA TYP 70 UNIT °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage(1) Reverse current @ rated VR(2) HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M CONDITIONS IF = 1A, TJ = 25°C TJ = 25°C TJ = 100°C SYMBOL VF IR TJ = 125°C Junction capacitance Reverse recovery time HS1A HS1B HS1D HS1F HS1G 1MHz, VR = 4.
0V CJ HS1J HS1K HS1M HS1A HS1B HS1D HS1F IF = 0.
5A, IR = 1.
0A, HS1G Irr = 0.
25A ...

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