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BRY61

NXP
Part Number BRY61
Manufacturer NXP
Description Programmable unijunction transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specificati...
Datasheet PDF File BRY61 PDF File

BRY61
BRY61

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 1999 Apr 27 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION Planar PNPN trigger device in a SOT23 plastic package.
APPLICATIONS • Switching applications such as: – Motor control – Oscillators – Relay replacement – Timers – Pulse shapers, etc.
MARKING 1 2 handbook, 2 columns BRY61 PINNING PIN 1 2 3 anode cathode gate DESCRIPTION 3 handbook, halfpage anode a g gate TYPE NUMBER BRY61 Note MARKING CODE(1) A5∗ k cathode MGL167 Top view MGC421 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.
1 Simplified outline SOT23 and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VGA IA(AV) IARM IASM dlA/dt Ptot Tstg Tj Tamb PARAMETER gate-anode voltage average anode current repetitive peak anode current rate of rise of anode current total power dissipation storage temperature junction temperature operating ambient temperature tp = 10 µs; δ = 0.
01 1A ≤ 2.
5 A Tamb ≤ 25 °C non-repetitive peak anode current tp = 10 µs CONDITIONS − − − − − − −65 − −65 MIN.
MAX.
70 175 2.
5 3 20 250 +150 150 +150 V mA A A A/µs mW °C °C °C UNIT 1999 Apr 27 2 Philips Semiconductors Product specification Programmable unijunction transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 500 BRY61 UNIT K/W CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL IP IV Voffset IGAO IGKS VAK VOM tr PARAMETER peak point current valley point current offset voltage gate-anode leakage current gate-cathode leakage current anode-cathode voltage peak output voltage rise time CONDITIONS VS = 10 V; RG = 10 kΩ; (see Fig.
7) VS = 10 V; RG = 100 kΩ; (see Fig.
7) VS = 10 V; RG = 10 kΩ; (see Fig.
7) VS = 10 V; RG = 100 kΩ; (see Fig.
7) typical curve; IA = 0; (see Fig.
7) IK =...


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