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1N5817W

CHINA BASE
Part Number 1N5817W
Manufacturer CHINA BASE
Description 1A Surface Mount Schottky Barrier Diode
Published Jan 26, 2018
Detailed Description 1N5817W-1N5819W 1A Surface Mount Schottky Barrier Diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Absolute Maxim...
Datasheet PDF File 1N5817W PDF File

1N5817W
1N5817W

Overview
1N5817W-1N5819W 1A Surface Mount Schottky Barrier Diode PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage 1N5817W 1N5818W 1N5819W Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current (8.
3 ms Single Half Sine-Wave) Power Dissipation Operating Temperature Range Storage Temperature Range Top View Marking Code: 1N5817W: SJ 1N5818W: ME 1N5819W: SL Simplified outline SOD-123 and symbol Symbol VR IF(AV) IFSM Ptot Tj Tstg Value 20 30 40 1 9 450 - 55 to + 125 - 55 to + 125 Unit V A A mW OC OC Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 1 mA Reverse Current at VR = 20 V at VR = 30 V at VR = 40 V at VR = 4 V at VR = 6 V Forward Voltage at IF = 0.
1 A at IF = 1 A at IF = 3 A Total Capacitance at VR = 4 V, f = 1 MHz 1N5817W 1N5818W 1N5819W 1N5817W 1N5818W 1N5819W 1N5819W 1N5819W 1N5819W 1N5817W 1N5818W 1N5819W 1N5817W 1N5818W 1N5819W Symbol V (BR)R IR VF Ctot Min.
20 30 ...


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