DatasheetsPDF.com

BFR183

Part Number	BFR183
Manufacturer	Siemens Semiconductor Group
Description	NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector current from 2 mA to 30mA)
Published	Mar 23, 2005
Detailed Description	BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA...
Datasheet	BFR183 PDF File

Overview

BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.
2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 183 RHs Q62702-F1316 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 200 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 60 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Dec-11-1996 BFR 183 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
DC Charact...

Similar Datasheet

BFR10 NPN Transistor - SGS-ATES
BFR106 NPN 5 GHz wideband transistor - NXP
BFR106 NPN Silicon RF Transistor - Siemens Semiconductor Group
BFR106 Low Noise Silicon Bipolar RF Transistor - Infineon Technologies AG
BFR106 NPN Transistor - INCHANGE
BFR11 NPN Transistor - SGS-ATES
BFR14B NPN SILICON MICROWAVE TRANSISTOR - Siemens Semiconductor Group
BFR14C NPN SILICON MICROWAVE TRANSISTOR - Siemens Semiconductor Group
BFR16 NPN Transistor - SGS-ATES
BFR17 NPN Transistor - SGS-ATES

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)