DatasheetsPDF.com

BFR183

Part Number	BFR183
Manufacturer	Infineon Technologies AG
Description	Low Noise Silicon Bipolar RF Transistor
Published	Mar 23, 2005
Detailed Description	Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA ...
Datasheet	BFR183 PDF File

Overview

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.
9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR183 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR183 Marking Pin Configuration RHs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 60 °C Junction temperature Storage tem...

Similar Datasheet

BFR10 NPN Transistor - SGS-ATES
BFR106 NPN 5 GHz wideband transistor - NXP
BFR106 NPN Silicon RF Transistor - Siemens Semiconductor Group
BFR106 Low Noise Silicon Bipolar RF Transistor - Infineon Technologies AG
BFR106 NPN Transistor - INCHANGE
BFR11 NPN Transistor - SGS-ATES
BFR14B NPN SILICON MICROWAVE TRANSISTOR - Siemens Semiconductor Group
BFR14C NPN SILICON MICROWAVE TRANSISTOR - Siemens Semiconductor Group
BFR16 NPN Transistor - SGS-ATES
BFR17 NPN Transistor - SGS-ATES

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)