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BFR183T

Infineon Technologies AG
Part Number BFR183T
Manufacturer Infineon Technologies AG
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFR183T NPN Silicon RF Transistor Preliminary data  For low-noise, high-gain broadband amplifiers at 3 collector curr...
Datasheet PDF File BFR183T PDF File

BFR183T
BFR183T

Overview
BFR183T NPN Silicon RF Transistor Preliminary data  For low-noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.
2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR183T Maximum Ratings Parameter Marking RHs 1=B Pin Configuration 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SC75 Value 12 20 20 2 65 5 250 150 mW °C mA Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS  83°C 1) Junction temperature Ambient temperature Storage temperature -65 .
.
.
150 -65 .
.
.
150 Thermal Resistance Junction - soldering point 2) RthJS  270 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Aug-22-2001 BFR183T Electrical Characteristics at TA = 25...


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