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BFR183W

Infineon Technologies AG
Part Number BFR183W
Manufacturer Infineon Technologies AG
Description Low Noise Silicon Bipolar RF Transistor
Published Mar 23, 2005
Detailed Description Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA ...
Datasheet PDF File BFR183W PDF File

BFR183W
BFR183W

Overview
Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.
9 dB at 900 MHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available BFR183W 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR183W Marking Pin Configuration RHs 1=B 2=E 3=C Package SOT323 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 56 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 12 20 20 2 65 5 450 150 -55 .
.
.
150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 210 1TS is measured on the collector lead at the soldering point to the pcb 2For the ...


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