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BFR93

NXP
Part Number BFR93
Manufacturer NXP
Description NPN 5 GHz wideband transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BFR93 NPN 5 GHz wideband transistor Product specification Supersedes data of Septemb...
Datasheet PDF File BFR93 PDF File

BFR93
BFR93

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BFR93 NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES • Very low intermodulation distortion • High power gain • Excellent wideband properties and low noise up to high frequencies due to its very high transition frequency.
APPLICATIONS • RF wideband amplifiers and oscillators.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre fT GUM F dim PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain noise figure intermodulation distortion Ts ≤ 95 °C IC = 2 mA; VCE = 5 V; f = 1 MHz IC = 30 mA; VCE = 5 V; f = 500 MHz; Tj = 25 °C IC = 30 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C IC = 2 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C IC = 30 mA; VCE = 5 V; RL = 75 Ω; VO = 300 mV; fp + fq − fr = 493.
25 MHz; Tamb = 25 °C open emitter open base CONDITIONS − − − − 0.
8 5 16.
5 1.
9 −60 TYP.
DESCRIPTION NPN wideband transistor in a plastic SOT23 package.
PNP complement: BFT93.
PINNING PIN 1 2 3 base emitter collector DESCRIPTION page BFR93 3 1 Top view Marking code: R1p.
2 MSB003 Fig.
1 SOT23.
MAX.
15 12 35 300 − − − − − V V UNIT mA mW pF GHz dB dB dB LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1.
Ts is the temperature at the soldering point of the collector pin.
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 95 °C; note 1 open emitter open base open collector CONDITIONS − − − − − −65 − MIN.
MAX.
15 12 2 35 300 +150 175 V V V mA mW °C °C UNIT 1997 Oct 29 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor THERMAL CHARACTERISTI...


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