DatasheetsPDF.com

BFR96

Microsemi Corporation
Part Number BFR96
Manufacturer Microsemi Corporation
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Published Mar 23, 2005
Detailed Description 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRE...
Datasheet PDF File BFR96 PDF File

BFR96
BFR96


Overview
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • High Current-Gain – Bandwidth Product, fT = 4.
5 GHz (typ) @ IC = 50 mA Low Noise Figure – NF = 2.
4 dB (typ) @ f = 0.
5 GHz High Power Gain – Gmax = 14.
5dB (typ) @ f = 0.
5 GHz Macro T (STYLE #2) DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers.
Also used in applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 20 3.
0 100 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 100ºC Derate above 100ºC 500 10 mWatts mW/ ºC MSC1309.
PDF 10-25-99 BFR96 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCB0 BVEBO ICBO Test Conditions Min.
Collector-Emitter Breakdown Voltage (IC = 1.
0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.
1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.
1 mAdc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, VBE = 0 Vdc) 15 20 3.
0 Value Typ.
Max.
100 Unit Vdc Vdc Vdc nA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) 30 200 - DYNAMIC Symbol Ftau CCB Test Conditions Min.
Current-Gain – Bandwidth Product (IC = 50 mA, VCE = 10 Vdc, f = 0.
5 GHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.
0 MHz) Value Typ.
5.
0 2.
6 Max.
3.
2 Unit GHz pF MSC1309.
PDF 10-25-99 BFR96 FUNCTIONAL Symbol Test Conditions Min.
NF |S21| 2 Value Typ.
2.
0 Max.
Unit dB Noise Figure (IC = 10 mAdc, VCE = 10 Vdc, f = 0.
5 GHz) Insertion Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 0.
5 GHz) Maximum Stable Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 0.
5 GHz) Maximum Unilateral Gain (1) (IC = 50 mAdc, VCE = 10 Vdc, f = 0.
5 GHz) - 12 13 - dB MSG - 16.
5 - dB G U max - 14.
5 - dB Table 1.
Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA f S11 (MHz) 100 200 ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)