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BFS17P

Infineon Technologies AG
Part Number BFS17P
Manufacturer Infineon Technologies AG
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFS17P NPN Silicon RF Transistor Features • Maximum collector-emitter voltage VCE0 = 15 V • Maximum collector current IC...
Datasheet PDF File BFS17P PDF File

BFS17P
BFS17P

Overview
BFS17P NPN Silicon RF Transistor Features • Maximum collector-emitter voltage VCE0 = 15 V • Maximum collector current IC = 25 mA • Noise figure NF = 3.
5 dB • 3rd order output intercept point OIP3 = 21.
5 dBm • 1 dB output compression point P-1dB = 10 dBm • Transition frequency fT = 1.
4 GHz • Maximum total power dissipation Ptot = 280 mW • Package: SOT23 • Pb-free (RoHS compliant) package Potential Applications • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • For mixers and oscillators in sub-GHz applications Device Information ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type / Ordering code Marking Pin Configuration BFS17P / BFS17PE6327HTSA1 MCs 1=B 2=E 3=C Package SOT23 Datasheet www.
infineon.
com Please read the Important Notice and Warnings at the end of this document Revision 1.
1 2017-06-01 BFS17P NPN Silicon RF Transistor Table of contents Table of contents Features .
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1 Potential Applications .
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1 Device Information .
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1 Table of contents .
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2 1 Maximum Ratings .
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3 2 Thermal Resistance .
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3 3 Electrical Characteristics .
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