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BFS17W

Part Number	BFS17W
Manufacturer	Infineon Technologies AG
Description	NPN Silicon RF Transistor
Published	Mar 23, 2005
Detailed Description	NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • Pb-free (RoH...
Datasheet	BFS17W PDF File

Overview

NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • Pb-free (RoHS compliant) package BFS17W 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17W Marking Pin Configuration MCs 1=B 2=E 3=C Package SOT323 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f = 10 MHz Total power dissipation1) TS ≤ 93 °C Junction temperature Ambient temperature VCEO VCBO VEBO IC ICM Ptot TJ TA 15 25 2.
5 25 50 280 150 -65 .
.
.
150 Storage temperature TStg -65 .
.
...

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