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B5819W

GME
Part Number B5819W
Manufacturer GME
Description Schottky Barrier Diode
Published Feb 12, 2018
Detailed Description Production specification Schottky Barrier Diode FEATURES  Extremely low VF.  Low stored change,majority carrier condu...
Datasheet PDF File B5819W PDF File

B5819W
B5819W

Overview
Production specification Schottky Barrier Diode FEATURES  Extremely low VF.
 Low stored change,majority carrier conduction  Low power loss/high efficient.
 MSL 1.
APPLICATIONS Pb Lead-free  For Use In Low Voltage, High Frequency Inverters  Free Wheeling, And Polarity Protection Applications B5818W-B5819W SOD-123 ORDERING INFORMATION Type No.
Marking B5818W B5819W SK SL Package Code SOD-123 SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5818W Non-Repetitive Peak reverse voltage VRSM 36 B5819W Unit 48 V Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage VRRM VRWM VR 30 40 V RMS Reverse Voltage Average Rectified output Current Repetitive Peak Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 95°C) Peak forward surge current@=8.
3ms Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Rage VR(RMS) Io IFRM IFSM Pd RθJA TJ,TSTG 21 28 1 625 1...


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