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BLF177

NXP
Part Number BLF177
Manufacturer NXP
Description HF/VHF power MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor Product specification File under Discrete Semicon...
Datasheet PDF File BLF177 PDF File

BLF177
BLF177

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch.
andbook, halfpage 1 BLF177 PIN CONFIGURATION 4 d DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range.
The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications.
Refer to the 'General' section for further information.
PINNING - SOT121 PIN 1 2 3 4 drain source gate source DESCRIPTION g MBB072 s 2 3 MLA876 Fig.
1 Simplified outline and symbol.
CAUTION T...


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