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BLF245B

NXP
Part Number BLF245B
Manufacturer NXP
Description VHF push-pull power MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BLF245B VHF push-pull power MOS transistor Product specification September 1992 Phi...
Datasheet PDF File BLF245B PDF File

BLF245B
BLF245B

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BLF245B VHF push-pull power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability.
DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead, SOT279 balanced flange envelope, with a ceramic cap.
The mounting flange provides the common source connection for the transistors.
PINNING - SOT279 PIN 1 2 3 4 5 DESCRIPTION gate 1 drain 1 gate 2 drain 2 source Top view fpage BLF245B PIN CONFIGURATION 1 4 g2 d2 s d1 MSB018 MBB157 5 2 3 g1 Fig.
1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected against static charge during trans...


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