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MMBD101W Datasheet PDF


Part Number MMBD101W
Manufacturer PAN JIT
Title SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
Description MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 200 mW FEATURES • Low Capacitance,Min...
Features
• Low Capacitance,Minimizing Insertion Losses in VHF Applications
• Low VF : 0.5V (Typ) at IF=10mA
• Extremely Fast Switching Speed
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case : SOT-323, Plastic Termin...

File Size 138.20KB
Datasheet MMBD101W PDF File








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MMBD101 : MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 250 mW FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx weight : 0.0003 ounces, 0.0084 grams MAXIMUM RATINGS PARAMETER Marking Code Reverse Voltage Forword Power Dissipation Junction Temperature Range Storage Temperature Range Circuit Figure THERMAL CHARACTERISTICS PARAMETER Termal.

MMBD101 : ® WON-TOP ELECTRONICS MMBD101 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Very Low Capacitance  Low Noise Figure 6.0dB Typ. @ 1.0GHz  PN Junction Guard Ring for Transient and ESD Protection  For General Purpose Switching Applications  Plastic Material – UL Recognition Flammability Classification 94V-0 B Mechanical Data  Case: SOT-23, Molded Plastic K  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: See Diagram  Weight: 0.008 grams (approx.)  Mounting Position: Any  Marking: 4M  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 A ED H G TOP VIEW C J L M SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.4.

MMBD101 : MMBD101 CASE 318-02/03, STYLE 8 SOT-23 (TO-236AA/AB) HOT-CARRIER UHF MIXER DIODE MAXIMUM RATINGS Rating Reverse Voltage Symbol vR THERMAL CHARACTERISTICS Characteristic 'Total Device Dissipation, TA = 25°C Derate above 25°C Symbol PD Storage Temperature T stq 'Thermal Resistance Junction to Ambient R 0JA mm'Package mounted on 99.5% alumina 10 x 8 x 0.6 Value 4.0 Max 350 2.8 150 357 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Symbol Min Typ Max Reverse Breakdown Voltage Or = 10 ^Adc) V(BR) Reverse Voltage Leakage Current (V R = 3.0 Vdc) Series Inductance (f = 250 MHz) 0.25 LS Case Capacitance (f = 1.0 MHz) C C 0.18 D.

MMBD101 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD101/D Schottky Barrier Diodes • Low Noise Figure — 6.0 dB Typ @ 1.0 GHz Designed primarily for UHF mixer applications but suitable also for use in detector and ultra–fast switching circuits. Supplied in an inexpensive plastic package for low–cost, high–volume consumer requirements. Also available in Surface Mount package. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • High Forward Conductance — 0.5 Volts (Typ) @ IF = 10 mA MBD101 MMBD101LT1 Motorola Preferred Devices SILICON SCHOTTKY BARRIER DIODES 2 CATHODE 1 ANODE 1 2 3 CATHODE 1 ANODE CASE 182– 02, STYLE 1 (TO–226AC) 3 MAXIMUM RATINGS MBD101 Rating Reve.

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MMBD101 : Production specification Schottky Barrier Diodes MMBD101 FEATURES z Low noise figure -6.0dB @1.0GHz. Pb z Surface mount package ideally suited Lead-free for automatic insertion. z Very low capacitance –less than 1.0pF @zero volts. z High forward conductance -0.5volts (typ.) @IF=10mA. APPLICATIONS z High speed switching. SOT-23 ORDERING INFORMATION Type No. MMBD101 Marking 4M Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol DC Reverse Voltage VR Power Dissipation Pd Operating Junction Temperature Range Tj Storage Temperature Range TSTG Limits 7.0 225 150 -55 to +150 Unit V mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unles.

MMBD1010LT1 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Switching Diode Part of the GreenLine™ Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage (≤ 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a non–forward–biased condition. • Offered in four Surface Mount package types • Available in 8 mm Tape and Reel in quantities of 3,000 Applications • ESD Protection • Reverse Polarity Protection • Steering Logic • Medium–Speed Switching 3 CATHODE ANODE 1 2 ANODE MMBD1010LT1 MMBD2010T1 MMBD3010T1 Motorola Preferred Devices MMBD.

MMBD1010LT1 : MMBD1010LT1 Switching Diode Part of the GreenLine™ Portfolio of devices with energy−conserving traits. This switching diode has the following features: • Very Low Leakage (≤ 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a non−forward−biased condition. • Offered in four Surface Mount package types • Available in 8 mm Tape and Reel in quantities of 3,000 Applications • ESD Protection • Reverse Polarity Protection • Steering Logic • Medium−Speed Switching MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current DEVI.

MMBD101LT1 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra–fast switching circuits. Supplied in an inexpensive plastic package for low–cost, high–volume consumer requirements. Also available in Surface Mount package. • Low Noise Figure — 6.0 dB Typ @ 1.0 GHz • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • High Forward Conductance — 0.5 Volts (Typ) @ IF = 10 mA MBD101 MMBD101LT1 Motorola Preferred Devices SILICON SCHOTTKY BARRIER DIODES 2 CATHODE 1 ANODE 3 CATHODE 1 ANODE 1 2 CASE 182– 02, STYLE 1 (TO–226AC) MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation @ TA = 25.

MMBD101LT1 : MBD101, MMBD101LT1 Preferred Device Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. Features • Low Noise Figure − 6.0 dB Typ @ 1.0 GHz • Very Low Capacitance − Less Than 1.0 pF • High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Reverse Voltage Forward Power Dissipation TA = 25°C MBD101 MMBD101LT1 VR PF Value 7.0 280 225 Unit V mW Derate above 25°C MBD101 MMBD101LT1 2.2 mW/°C 1.8 Junction.

MMBD101LT1G : MBD101G, MMBD101LT1G Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. Features • Low Noise Figure − 6.0 dB Typ @ 1.0 GHz • Very Low Capacitance − Less Than 1.0 pF • High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Reverse Voltage VR Forward Power Dissipation TA = 25°C MBD101 MMBD101LT1 PF Value 7.0 280 225 Unit V mW Derate above 25°C MBD101 MMBD101LT1 2.2 mW/°C 1.8 Junc.




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