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2SD1412

INCHANGE
Part Number 2SD1412
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published Mar 12, 2018
Detailed Description isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·...
Datasheet PDF File 2SD1412 PDF File

2SD1412
2SD1412

Overview
isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.
4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1412 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(B...


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