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BD534

Fairchild Semiconductor
Part Number BD534
Manufacturer Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Published Mar 23, 2005
Detailed Description BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD5...
Datasheet PDF File BD534 PDF File

BD534
BD534


Overview
BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively 1 TO-220 2.
Collector 3.
Emitter 1.
Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD534 : BD536 : BD538 : BD534 : BD536 : BD538 Value - 45 - 60 - 80 - 45 - 60 - 80 -5 -8 -1 50 150 - 65 ~ 150 Units V V V V V V V A A W °C °C VCEO Collector-Emitter Voltage VEBO IC IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current : BD534 : BD536 : BD538 : BD534 : BD536 : BD538 Test Condition VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VEB = - 5V, IC = 0 VCE = -2 V, IC = - 500mA VCE = - 5V, IC = - 10mA VCE = - 2V, IC = - 2A 40 20 15 25 15 30 15 40 20 - 0.
8 - 1.
5 3 12 75 100 - 0.
8 V V V MHz Min.
Typ.
Max.
- 100 - 100 - 100 - 100 - 100 - 100 -1 Units µA µA µA µA µA µA mA ICES Collector Cut-off Current IEBO hFE Emitter Cut-off Current * DC Current Gain : ALL DEVICE : BD534/536 : BD538 : BD534/536 : BD538 : ALL DEVICE : ALL DEVICE hFE hFE Groups J K VCE = - 2V, IC = - 2A VCE = - 2V, IC = - 3A VCE = -2V, IC = - 2A VCE = - 2V, IC = - 3A IC = - 2A, IB = - 0.
2A IC = - 6A, IB = - 0.
6A VCE = - 2V, IC = - 2A VCE = - 1V, IC = - 500mA VCE(sat) VBE(on) fT * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product * Pulse Test: PW =300µs, duty Cycle =1.
5% Pulsed ©2000 Fairchild Semiconductor International Rev.
A, February 2000 BD534/536/538 Typical Characteristics VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE 1000 VCE = -2V IC = 10 IB -1 V BE(sat) hFE, DC CURRENT GAIN 100 -0.
1 VCE(sat) 10 -0.
01 -0.
1 -1 -10 -0.
01 -0.
1 ...


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