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BD670

STMicroelectronics
Part Number BD670
Manufacturer STMicroelectronics
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Published Mar 23, 2005
Detailed Description BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s SGS-THOMSON PREFERRED S...
Datasheet PDF File BD670 PDF File

BD670
BD670

Overview
BD677/A/679/A/681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar and switching applications The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively.
SOT-32 3 2 1 INTERNAL SCHEMATIC DIAGRAM R 1 Typ.
= 7K Ω R 2 T yp.
= 230 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 C Storage Temperature Max.
O perating Junction Temperature o Value BD677/A BD678/A 60 60 BD679/A BD680/A 80 80 5 4 6 0.
1 40 -65 to 150 150 BD681 BD682 100 100 Uni t V V V A A A W o o C C For PNP types voltage and current values are negative.
September 1997 1/6 BD677/677A/678/678A/679/679A/680/680A/681/682 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.
12 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEO I EBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Test Cond ition s V CE = rated V CBO V CE = rated V CBO T C = 100 o C Min.
Typ .
Max.
0.
2 2 0.
5 2 Un it mA mA mA mA V CE = half rated V CEO V EB = 5 V I C = 50 mA for BD677/677A/678/678A for BD679/679A/680/680A for BD681/682 for BD677/678/679/680/681/682 I C = 1.
5 A I B = 30 mA for BD677A/678A/...


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