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BDT60

Power Innovations Limited
Part Number BDT60
Manufacturer Power Innovations Limited
Description PNP Transistor
Published Mar 23, 2005
Detailed Description BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 ...
Datasheet PDF File BDT60 PDF File

BDT60
BDT60

Overview
BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1.
5 V, 3 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base.
MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDT60 Collector-base voltage (IE = 0) BDT60A BDT60B BDT60C BDT60 Collector-emitter voltage (IB = 0) BDT60A BDT60B BDT60C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1.
Derate linearly to 150°C case temperature at the rate of 0.
4 W/°C.
2.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V EBO IC IB Ptot Ptot Tj Tstg TA VCEO VCBO SYMBOL VALUE -60 -80 -100 -120 -60 -80 -100 -120 -5 -4 -0.
1 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date.
Products conform to specifications in accordance with the terms of Power Innovations standard warranty.
Production processing does not necessarily include testing of all parameters.
1 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDT60 V (BR)CEO IC = -30 mA IB = 0 (see Note 3) BDT60A BDT60B BDT60C VCE = -30 V ICEO Collector-emitter cut-off current V CE = -40 V V CE = -50 V V CE = -60 V VCB = -60 V V CB = -80 V V CB = -100 V ICBO Collector cut-off curren...


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