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2SA1012

Part Number	2SA1012
Manufacturer	GME
Description	PNP Epitaxial Silicon Transistor
Published	Apr 4, 2018
Detailed Description	PNP Epitaxial Silicon Transistor FEATURES  Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A  Compleme...
Datasheet	2SA1012 PDF File

Overview

PNP Epitaxial Silicon Transistor FEATURES  Low Collector Saturation Voltage.
VCE(sat)=-0.
4V(Max.
)at IC=-3A  Complements the 2SC2562.
Pb Lead-free  High Speed Switching Time:tstg=1.
0µs(Typ.
) Production specification 2SA1012 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature -50 V -5 V -5 A 2W -55 to +150 ℃ X028 Rev.
A www.
gmesemi.
com 1 Production specification PNP Epitaxial Silicon Transistor 2SA1012 ELECTRICAL CHARACTERISTICS Rati...

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