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2SA1179

GME
Part Number 2SA1179
Manufacturer GME
Description Silicon Epitaxial Planar Transistor
Published Apr 15, 2018
Detailed Description Production specification Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE which ...
Datasheet PDF File 2SA1179 PDF File

2SA1179
2SA1179

Overview
Production specification Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE which has satisfactory linearity.
 High speed switching.
 Complementary to 2SD1749.
Pb Lead-free 2SA1179 APPLICATIONS  For power application and switching.
ORDERING INFORMATION Type No.
Marking 2SA1179 M SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -55 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -50 -5 IC Collector Current -Continuous -150 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C093 Rev.
A www.
gmesemi.
com 1 Production specification Silicon Epitaxial Planar Transistor 2SA1179 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -55 V Collector-emit...


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