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2SA733

Part Number	2SA733
Manufacturer	GME
Description	Silicon Epitaxial Planar Transistor
Published	Apr 15, 2018
Detailed Description	Production specification Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE Linearity.  Power dissipation：P...
Datasheet	2SA733 PDF File

Overview

Production specification Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE Linearity.
 Power dissipation：PD=250mW.
 High hFE.
Pb Lead-free 2SA733 APPLICATIONS  Designed for use in driver stage of amplifier.
ORDERING INFORMATION Type No.
Marking 2SA733 CS SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous -60 -50 -5 -100 PC Tj,Tstg Collector Dissipation Junction and Storage Temperature 250 -55 to +150 Units V V V mA mW ℃ C009 Rev.
A www.
gmesemi.
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