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2SB709A

GME
Part Number 2SB709A
Manufacturer GME
Description Silicon Epitaxial Planar Transistor
Published Apr 15, 2018
Detailed Description Production specification Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE.  Min...
Datasheet PDF File 2SB709A PDF File

2SB709A
2SB709A

Overview
Production specification Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE.
 Mini type package, allowing downsizing Pb Lead-free of the equipment and automatic insertion through the tape packing and the magazine packing.
2SB709A APPLICATIONS  For general amplification complementary to 2SD601A.
ORDERING INFORMATION Type No.
Marking 2SB709A BQ1/BR1/BS1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO ICP IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak collector Current Collector Current Collector Dissipation Junction and Storage Temperature -45 -45 -7 -200 -100 200 -55 to +150 Units V V V mA mA mW ℃ C015 Rev.
A www.
gmesemi.
com 1 Production specification Silicon Epitaxial Planar Transistor 2SB709A ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX...


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