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2SC1623

GME
Part Number 2SC1623
Manufacturer GME
Description Silicon Transistor
Published Apr 15, 2018
Detailed Description Production specification Silicon Epitaxial Planar Transistor FEATURES  High DC current gain:hFE=200TYP (VCE=6.0V,IC=...
Datasheet PDF File 2SC1623 PDF File

2SC1623
2SC1623

Overview
Production specification Silicon Epitaxial Planar Transistor FEATURES  High DC current gain:hFE=200TYP (VCE=6.
0V,IC=1.
0mA).
 High Voltage:VCEO=50V.
 MSL 1.
APPLICATIONS Pb Lead-free  NPN Silicon Epitaxial Planar Transistor.
 Audio frequency general purpose amplifier.
ORDERING INFORMATION Type No.
Marking 2SC1623 L4/L5/L6/L7 2SC1623 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 60 50 5 100 200 -55 to +150 Units V V V mA mW ℃ C018 Rev.
A www.
gmesemi.
com 1 Production specification Silicon Epitaxial Planar Transistor 2SC1623 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collec...


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