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2SA1611

GME
Part Number 2SA1611
Manufacturer GME
Description PNP Silicon Transistor
Published Apr 20, 2018
Detailed Description PNP Silicon Epitaxial Planar Transistor FEATURES  High voltage VCEO=-50V.  Excellent HFE Linearity.  High DC current...
Datasheet PDF File 2SA1611 PDF File

2SA1611
2SA1611

Overview
PNP Silicon Epitaxial Planar Transistor FEATURES  High voltage VCEO=-50V.
 Excellent HFE Linearity.
 High DC current gain : hFE=200 typ.
 Complementary to 2SC4177.
Pb Lead-free Production specification 2SA1611 APPLICATIONS  Audio frequency general purpose amplifier applications.
ORDERING INFORMATION Type No.
Marking 2SA1611 M4/M5/M6/M7 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -100 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F033 Rev.
A www.
gmesemi.
com 1 Production specification PNP Silicon Epitaxial Planar Transistor 2SA1611 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emi...


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