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2SA1611

JCET
Part Number 2SA1611
Manufacturer JCET
Description PNP Transistor
Published Apr 20, 2018
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (P...
Datasheet PDF File 2SA1611 PDF File

2SA1611
2SA1611

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD JC(T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (PNP) FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 SOT–323 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 IC Collector Current -100 PC Collector Power Dissipation 150 RΘJA Thermal Resistance From Junction To Ambient 833 Tj Junction Temperature Tstg Storage Temperature 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1.
BASE 2.
EMITTER 3.
COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector-emitter voltage Transition frequency Symbol V(BR)CBO V(BR)CEO ...


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