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2SC3149

GME
Part Number 2SC3149
Manufacturer GME
Description NPN Transistor
Published May 10, 2018
Detailed Description Production specification NPN Triple Diffused Planar Silicon Transistor FEATURES  High breakdown voltage(VCBO≥900V). ...
Datasheet PDF File 2SC3149 PDF File

2SC3149
2SC3149

Overview
Production specification NPN Triple Diffused Planar Silicon Transistor FEATURES  High breakdown voltage(VCBO≥900V).
 Fast switching speed.
Pb  Wide ASO.
Lead-free 2SC3149 PPLICATIONS  800V/1.
5A Switching Regulator Applications.
TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Collector Current 1.
5 A ICP Collector Current(Pulse) 5A IB Base Current 0.
8 A PC Collector Power Dissipation 1.
2 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V012 Rev.
A www.
gmesemi.
com 1 Production specification NPN Triple Diffused Planar Silicon Transistor 2SC3149 ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO IC=1mA,IE=0 900 V Collector-emitter breakdown voltage...


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