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HM879

Part Number	HM879
Manufacturer	GME
Description	SILICON PNP EPITAXIAL TYPE TRANSISTOR
Published	May 17, 2018
Detailed Description	Production specification SILICON PNP EPITAXIAL TYPE TRANSISTOR FEATURES  Charger-up time is about 1 mS faster Than of...
Datasheet	HM879 PDF File

Overview

Production specification SILICON PNP EPITAXIAL TYPE TRANSISTOR FEATURES  Charger-up time is about 1 mS faster Than of a germanium transistor.
Pb Lead-free  Small saturation voltage can bring dissipation And flasing times.
HM879 ORDERING INFORMATION Type No.
Marking HM879 879 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 30 VCEX Collector-Emitter Voltage 20 VCEO Collector-Emitter Voltage 10 VEBO Emitter-Base Voltage 6 IC PC Tj,Tstg Collector Current –Continuous –Pluse Collector Dissipation Junction and Storage Temperature 3 5 1 -55 to +150 Units V V V V A W ℃ E079 Rev.
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