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BD158

Fairchild Semiconductor
Part Number BD158
Manufacturer Fairchild Semiconductor
Description NPN Epitxial Silicon Transistor
Published Mar 23, 2005
Detailed Description BD157/158/159 BD157/158/159 Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers 1 TO-126 2...
Datasheet PDF File BD158 PDF File

BD158
BD158

Overview
BD157/158/159 BD157/158/159 Low Power Fast Switching Output Stages • For T.
V Radio Audio Output Amplifiers 1 TO-126 2.
Collector 3.
Base 1.
Emitter NPN Epitxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD157 : BD158 : BD159 : BD157 : BD158 : BD159 Value 275 325 375 250 300 350 5 0.
5 1.
0 0.
25 20 50 - 65 ~ 150 Units V V V V V V V A A A W °C °C VCEO Collector-Emitter Voltage VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter *Collector-Emitter Breakdown Voltage : BD157 : BD158 : BD159 Collector Cut-off Current : BD157 : BD158 : BD159 IEBO hFE Emitter Cut-off Current * DC Current Gain VCB = 275V, IE = 0 VCB = 325V, IE = 0 VCB = 375V, IE = 0 VEB = 5V, IC = 0 VCE = 10V, IC = 50mA 30 100 100 100 ...


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